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| savantic semiconductor product specification silicon pnp power transistors 2sa1227 2SA1227A d escription with to-3pfa package complement to type 2sc2987/2987a high power dissipation applications for use in audio frequency power amplifier applications pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit 2sa1227 -140 v cbo collector-base voltage 2SA1227A open emitter -160 v 2sa1227 -140 v ceo collector-emitter voltage 2SA1227A open base -160 v v ebo emitter-base voltage open collector -5 v i c collector current -12 a i cm collector current-peak -20 a p t total power dissipation t c =25 120 w t j junction temperature 150 t stg storage temperature -55~150 downloaded from: http:///
savantic semiconductor product specification 2 silicon pnp power transistors 2sa1227 2SA1227A characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v cesat collector-emitter saturation voltage i c =-5a ;i b =-0.5a -0.8 -1.5 v v besat base-emitter saturation voltage i c =-5a ;i b =-0.5a -1.5 -2.0 v i cbo collector cut-off current v cb =-140v; i e =0 -50 a i ebo emitter cut-off current v eb =-3v; i c =0 -50 a h fe-1 dc current gain i c =-2a ; v ce =-5v 60 320 h fe -2 dc current gain i c =-5a ; v ce =-5v 40 c ob output capacitance i e =0 ; v cb =-10v;f=1mhz 280 pf f t transition frequency i c =-1a ; v ce =-5v 60 mhz h fe-1 classifications r q p 60-120 100-200 160-320 downloaded from: http:/// savantic semiconductor product specification 3 silicon pnp power transistors 2sa1227 2SA1227A package outline fig.2 outline dimensions (unindicated tolerance:0.30mm) downloaded from: http:/// |
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